Features & Benefits
- Thin Film Design
- Power Rating Up to 1 Watt
- Frequency Response +/-0.5dB
- Characterized to 20 GHz
- CPW and Microstrip Applications
- EIA 0603 SMT
- Highest Power in Class
- AIN Construction
- Balanced Pi design
- Non-Magnetic
- RoHs compliant
Typical Applications
- Telecommunications
- Satellite Communications
- Cellular Base Stations
- Microwave Radio
- ISM
- RF/Microwave Power
- Military/Aerospace
- Test and Measurement
- Impedance Matching
- Input Padding
- Signal Level Tuning
- Signal Conditioning
RF/Microwave SMT Attenuator Series (AT) is manufactured with the highest quality materials for reliable and repeatable performance. These devices are constructed with Aluminum Nitride (AIN) and are available in a standard EIA 0603 case size. The AT Series exhibits excellent performance characteristics for the most demanding RF/Microwave applications The AT series provides virtually flat loss over a broad frequency spectrum. Thin film metalization provides for very stable characteristics over temperature and time. Its balanced PI design provides even current distribution and accurate attenuation characteristics from DC to 20 GHz. It is designed to meet a wide range of RF and microwave large and small signal level applications. The AT is ideal for impedance matching, input padding, signal level tuning, and many other critical RF/Microwave applications. The AT is rated highest power in class and is suitable for microstrip and CPW applications.
The non-magnetic termination is available to provide bonding with conductive epoxies. The AT is fully compatible with high speed automated pick-and-place processing.
Note: Contact Factory for other attenuation values, termination styles and case sizes.
Datasheet / Catalogs – Click to Download
Part Number Information
Design Tools – Click to Download
Includes: DXF, S2P & HFSS Files