A Multilayer Approach to Transient Voltage Supressors
Written By: John Maxwell | Ning Chan | Allen Templeton
Abstract:
Improvements in integrated circuits have resulted in increased speed and increased ESD sensitivity. New systems require external protection more than ever before but advances in surface mount technology and product miniaturization place severe size constraints on protection components. Advances in ceramics now allow transient voltage suppressors to be built with multilayer structures resulting in improved electrical performance and in smaller sizes than comparable disc configurations. Clamping voltage and peak current performances approaching zener diode transient suppressors are achieved in the common 1206 (3.2 x 1.6mm) chip size, one third the size of SMT disc varistors or SMT zener diode supressors.
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Improvements in integrated circuits have resulted in increased speed and increased ESD sensitivity. New systems require external protection more than ever before but advances in surface mount technology and product miniaturization place severe size constraints on protection components. Advances in ceramics now allow transient voltage suppressors to be built with multilayer structures resulting in improved electrical performance and in smaller sizes than comparable disc configurations. Clamping voltage and peak current performances approaching zener diode transient suppressors are achieved in the common 1206 (3.2 x 1.6mm) chip size, one third the size of SMT disc varistors or SMT zener diode supressors.
